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Ekins-Daukes, N. J.*; Arafune, Koji*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; et al.
Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.683 - 686, 2005/00
no abstracts in English
Oyama, Hidenori*; Takakura, Kenichiro*; Nakabayashi, Masakazu*; Hirao, Toshio; Onoda, Shinobu; Kamiya, Tomihiro; Simoen, E.*; Claeys, C.*; Kuboyama, Satoshi*; Oka, Katsumi*; et al.
Nuclear Instruments and Methods in Physics Research B, 219-220, p.718 - 721, 2004/06
Times Cited Count：3 Percentile：24.89(Instruments & Instrumentation)no abstracts in English
Imaizumi, Mitsuru*; Takamoto, Tatsuya*; Sumita, Taishi*; Oshima, Takeshi; Yamaguchi, Masafumi*; Matsuda, Sumio*; Oi, Akihiko; Kamiya, Tomihiro
Proceedings of 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3) (CD-ROM), 4 Pages, 2004/01
The radiation response of InGaP, InGaAs and Ge single junction sub-cells in the triple junction space solar cell are studied in order to develop a device simulator which predicts the End-Of-Life performance of space solar cells. InGaP top-cells show no significant difference in radiation response between under AM0 light and dark conditions during irradiation. The radiation resistance of InGaAs cell which is used as middle cell decreases with increasing In contents. The Ge cell shows lower radiation reisitance as compared to InGaP and InGaAs cells.
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Mori, Hidenobu*; Ito, Hisayoshi
Proceedings of 5th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, p.155 - 160, 2002/10
no abstracts in English
-ray irradiationOyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu; Takami, Yasukiyo*; Ito, Hisayoshi
Physica B; Condensed Matter, 308-310, p.1185 - 1188, 2001/12
Times Cited Count：8 Percentile：44.94(Physics, Condensed Matter)no abstracts in English
Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Yamada, Takashi*; Tanabe, Tatsuya*; Takagishi, Shigenori*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 79(15), p.2399 - 2401, 2001/10
Times Cited Count：75 Percentile：90.93(Physics, Applied)The radiation response of 3MeV proton-irradiated InGaP, InGaAsP, and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response. The damage coefficient K
for 3MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with increase in the function of In-P bonds in those materials. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells.
Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Oshima, Takeshi
no journal, ,
no abstracts in English
